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Bulletin I2116 rev. D 12/98
SAFEIR Series 25TTS..
PHASE CONTROL SCR VT
Description/Features
The 25TTS.. SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
< 1.25V @ 16A = 300A
ITSM
VRRM 800 to 1600V
Output Current in Typical Applications Applications
Capacitive input filter TA = 55C, TJ = 125C, common heatsink of 1C/W
Single-phase Bridge
18
Three-phase Bridge Units
22 A
Major Ratings and Characteristics Characteristics
IT(AV) Sinusoidal waveform IRMS VRRM/VDRM ITSM VT dv/dt di/dt T
J
Package Outline Units
A
25TTS..
16
25 up to 1600 300 @ 16 A, TJ = 25C 1.25 500 150 - 40 to 125
A V A V V/s A/s C
TO-220AC
Also available in SMD-220 package (series 25TTS..S)
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1
25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
Voltage Ratings
Part Number
25TTS08 25TTS12 25TTS16
peak reverse voltage V
800 1200 1600
VRRM, maximum
peak direct voltage V
800 1200 1600
VDRM , maximum
IRRM/IDRM 125C mA
10
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current IRMS ITSM I2t Max. RMS On-state Current Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing
25TTS..
16 25 300 350 450 630
Units
A
Conditions
@ TC = 93 C, 180 conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied
A2 s
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied @ 16A, TJ = 25C TJ = 125C TJ = 25 C TJ = 125 C
I t VTM rt
2
Max. I t for fusing Max. On-state Voltage Drop On-state slope resistance
2
6300 1.25 12.0 1.0 0.5 10 Typ. -100 Max. 100 150
A s V m V mA
2
VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH Holding Current
VR = rated V RRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT=1A mA 25TTS08, 25TTS12 25TTS16 mA V/s A/s Anode Supply = 6V, Resistive load
IL
Max. Latching Current
200 500 150
dv/dt Max. Rate of Rise of off-state Voltage di/dt Max. Rate of Rise of turned-on Current
2
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25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
Triggering
Parameters
PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger
25TTS..
8.0 2.0 1.5 10 60 45 20
Units
W
Conditions
A V mA Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C V Anode supply = 6V, resistive load, TJ = - 10C Anode supply = 6V, resistive load, TJ = 25C Anode supply = 6V, resistive load, TJ = 125C TJ = 125C, VDRM = rated value mA TJ = 125C, VDRM = rated value
VGT
Max. required DC Gate Voltage to trigger
2.5 2.0 1.0
VGD IGD
Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger
0.25 2.0
Switching
Parameters
tgt trr tq
Typical turn-on time Typical reverse recovery time Typical turn-off time
25TTS..
0.9 4 110
Units
s TJ = 25C TJ = 125C
Conditions
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range to Case Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Min. Max. 0.5 2 (0.07) 6 (5) 12 (10) g (oz.) Kg-cm (Ibf-in) Mounting surface, smooth and greased
25TTS..
- 40 to 125 - 40 to 125 1.1 62
Units
C C/W
Conditions
RthJC Max. Thermal Resistance Junction RthJA
DC operation
TO-220AC
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25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C) 130
25TTS.. Series R thJC (DC) = 1.1 C/W
130
25TTS.. Series R thJC (DC) = 1.1 C/W
120
120
Conduction Angle
110
Conduction Period
110 30 100 60 90 120 180 90 0 5 10 15 20 Average On-state Current (A)
100
90 60 30 80 0 5 10
90 120 180 15 20 DC 25 30
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
35 30 25 20 RMS Limit 15 10 5 0 0 5 10 15 20 25 30 Average On-state Current (A)
Conduction Period
25 180 120 90 60 30 RMS Limit
20
15
DC 180 120 90 60 30
10
Conduction Angle
5
25TTS.. Series T J= 125C
25TTS.. Series T J = 125C
0 0 4 8 12 16 20 Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
350
Fig. 4 - On-state Power Loss Characteristics
400 350 300 250 200 150 25TTS.. Series 100 0.01
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
300
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied
250
200 25TTS.. Series 150 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
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25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
1000 Instantaneous On-state Current (A)
100
T J= 25C 10 T J= 125C
25TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100 Instantaneous Gate Voltage (V)
10
Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 s, tp >= 6 s
(1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b)
TJ = -10 C
TJ = 25 C
TJ = 125 C
1
(4)
(3)
(2)
(1)
VGD IGD
0.1 0.001 0.01
25TTS.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Transient Thermal Impedance Z thJC (C/W) 10
Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 25TTS.. Series 0.01 0.0001
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
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25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
Outline Table
10.54 (0.41)
2
1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 2.92 (0.11) 2.54 (0.10) TERM 2 6.48 (0.25) 6.23 (0.24) 1.22 (0.05)
MAX.
15.24 (0.60) 14.84 (0.58) 123
2
14.09 (0.55) 13.47 (0.53)
3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004)
1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03)
2.89 (0.11) 2.84 (0.10)
123 4.57 (0.18) 4.32 (0.17)
0.61 (0.02) MAX.
Dimensions in millimeters and (inches)
5.08 (0.20) REF.
Ordering Information Table
Device Code
25
1
T
2
T
3
S
4
16
5
2 (A)
1 2 3 4 5
-
Current Rating, RMS value Circuit Configuration: T = Single Thyristor Package: T = TO-220AC Type of Silicon: S = Converter Grade Voltage code: Code x 100 = VRRM 08 = 800V 12 = 1200V 16 = 1600V
1 (K) (G) 3
6
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25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
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